Holon   Academic Institute   of Technology

Journal of Science and Engineering

 

Dmitriy Khokhlov Physics Department, M.V. Lomonosov Moscow State University, Moscow 117234, Russia Dmitriy Khokhlov, and Boris Volkov Fermi level pinning and long-term relaxation effects in doped IV-VI narrow-gap semiconductors HAIT Journal of Science and Engineering 1, 2, 266-273 (2004)