Recent Publications
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D.S.
Meyer, B.T. Helenbrook, and
M.C. Cheng, “Proper orthogonal decompositionbased
reduced basis element thermal modeling of integrated circuits”, Int. J. Numer. Meth. Engng.,
nme.5529, March 2017

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MingC. Cheng, “A ReducedOrder
Presentation of the Schrödinger Equation”, AIP Advances, vol.6, No. 9, 095121, Sept., 2016.

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Wangkun Jia, Brian Helenbrook,
MingC. Cheng, “Thermal Modeling of MultiFin Field Effect Transistor
Structure Using Proper Orthogonal Decomposition”, IEEE Trans. Electron
Devices, Vol. 61, No. 8, pp. 27522759, August, 2014.

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Wangkun Jia, Brian Helenbrook,
MingC. Cheng, “Fast
Thermal Simulation of FinFET Circuits Based on a
MultiBlock ReducedOrder Model”, IEEE Trans. ICs & Systems, vol. 35,
no. 7, pp. 11141124, July 2016.

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MingC. Cheng, Jeffrey A Smith, Wangkun Jia, Ryan Coleman,
“An Effective Thermal Model for FinFET
Structure,” IEEE Trans. Electron Devices, Vol. 61, No. 1, pp. 202206,
January 2014.

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K. Zhang, W. Jia, J. Koplowitz, Piergiovanni Marzocca,
MingC. Cheng, “Modeling of Photovoltaic Cells and Arrays Based on Singular
Value Decomposition”, Semiconductor Science & Tech., March 2013. (IOP Select)

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R. Venters, Bian T. Helenbrook, Kun
Zhang, MingC. Cheng, “Proper Orthogonal Decomposition Based Thermal
Modeling of Semiconductor Structures”, IEEE
Trans Electron Devices, vol.59, No. 11, pp. 29242931, Nov. 2012.

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Eric Foreman, Peter Habitz, MingC. Cheng, Chandu
Visweswariah, “A Novel Method for Reducing Metal Variation
with Statistical Static Timing Analysis,” IEEE Trans. Comput.Aided
Des. Integr. Circuits and Syst., vol. 31, pp.
12931297, August 2012.

·

Yu Zhang, Pragasen Pillay, Maged
Ibrahim, MingC Cheng, “Magnetic Characteristics and Excess Eddy Current
Losses”, IEEE Tran Energy Conversion, vol. 48, no. 2, pp. 623  629,
MarchApril, 2012

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Yu Zhang, MingC
Cheng, Pragasen Pillay, “A Novel Hysteresis Core
Loss Model,for Magnetic Laminations”,
IEEE Tran Energy Conversion, Vol. 26, No. 4, pp. 993999, Dec 2011.

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Eric Foreman, Peter Habitz, MingC. Cheng, Christino
Tamon, “Inclusion of ChemicalMechanical
Polishing Variation in Statistical Static Timing Analysis,” IEEE Trans. Comput.Aided
Des. Integr. Circuits and Syst., Vol. 30, pp.
1758 – 1762, Nov. 2011.

·

Y.X. Liang, Q. Dong,
M.C. Cheng, U. Gennser, A. Cavanna,
Y. Jin, “Insight into low frequency noise induced
by gate leakage current in AlGaAs/GaAs high
electron mobility transistors at 4.2K,” Applied Phys. Lett., Vol. 99,
113505 (2011).

·

MingC.
Cheng, Kun Zhang, “An Effective Thermal Circuit Model for Electrothermal
Simulation of SOI Analog Circuits,” SolidState Electronics, 48–61, vol.
62, 2011. ( doi: 10.1016/j.sse.2011.03.013).

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Kun Zhang, MingC.
Cheng, “Thermal Circuit for SOI Structure Accounting for NonIsothermal
effect,” IEEE Trans. Electron Devices, Vol 57, pp. 28382847, November
2010.

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Yu
Zhang, MingC. Cheng, Pragasen
Pillay, Brian Helenbrook , “High
Order Finite Element Model for Core Loss Assessment in a Hysteresis
Magnetic Lamination,” J. Appl. Physics, Vol. 106, 043911 (2009).

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E. Gremion, A. Cavanna, YX.
Liang, U. Gennser, M.C. Cheng, etc., “Development
of UltraLow Noise HEMTs for Cryoelectronics
at ≤ 4.2 K,” J.
Low Temperature Physics, Vol. 151, pp. 971978, May, 2008

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Feixia Yu, MingC. Cheng, “Electrothermal Simulation of SOI CMOS Analog Integrated
Circuits,” SolidState Electronics, vol. 51, pp. 691702, May 2007.

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S. Saikin, M. Shen, MingC. Cheng, “Spin dynamics in a compound semiconductor spintronic structure with a
Schottky barrier,“ J. Phys.: Condens. Matter, vol. 18, pp. 1535–1544, January 2006.

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Min Shen, Semion Saikin, MingC. Cheng,
“Spin injection in spin FETs using a stepdoping profile,” IEEE Trans. Nanotechnol., vol. 4, pp. 4044, Jan. 2005.

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Feixia Yu, MingC. Cheng, "Application
of heat flow models to SOI current mirrors," SolidState
Electronics Vol. 48, pp. 17331739, Oct 2004.

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Jun Lin, Min Shen,
MingC. Cheng, M.L. Glasser, "Efficient
thermal modeling of SOI MOSFETs for fast dynamic operation," IEEE Trans. Electron Devices, Vol. 51, pp. 16591666,
Oct. 2004.

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Ming Shen, Semion Saikin, MingC. Cheng,
"Monte Carlo modeling of spin injection through a Schottky
barrier and spin transport in a semiconductor quantum well," J. Appl. Phys., Vol. 96, pp. 43194325, 2004.

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Semion Saikin,
Min Shen and MingC. Cheng, "Study of SpinPolarized Transport
Properties for SpinFET Design Optimization," IEEE
Trans. Nanotechnology, Vol. 3, pp. 173179, March 2004.

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MingC. Cheng, Feixia Yu, Peter Habitz, Goodarz Ahmadi, "Analytical heat flow modeling of
silicononinsulator devices," SolidState
Electronics, Vol. 48, pp. 415426, March 2004.

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Min Shen, S. Saikin, M.C. Cheng, Vladimir Privman,
"Monte Carlo Modeling of Spin FETs Controlled by SpinOrbit
Interaction," Mathematics and Computers in
Simulation, 65, pp. 351363, March 2004.

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MingC. Cheng, Feixia Yu, Jun Lin, Min Shen, Goodarz
Ahmadi, "SteadyState and Dynamic Heat Flow Modeling of SOI
MOSFET’s," Microelectronics Reliability,
vol. 44, pp. 381396, March 2004. (Invited paper)

·

Feixia Yu, MingC. Cheng, Peter Habitz and Goodarz Ahmadi,
"Modeling of Thermal Behavior in SOI Structures," IEEE Trans. Electron Devices, Vol. 51, pp. 8391, January
2004.











