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HAIT Journal of Science and Engineering A Volume 5, Issues 1-2, pp. 52-70 © 2008 Holon Institute of Technology |
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Disorder effects in dilute magnetic semiconductorsBoris A. Aronzon |
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Russian Research Center "Kurchatov Institute", Kurchatov sq. 1, Moscow 123182, Russia and P.N. Lebedev Research Center in Physics, Leninskii Ave. 53, Moscow 119991, Russia e-mail: aronzon@mail.ru Received 22 August 2007 |
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The paper summarizes the results of our studies of disorder effects in dilute magnetic semiconductors. The structural, magnetic and Coulomb disorder are discussed both in bulk and 2D systems. The magnetic and transport properties of structures with MnSb ferromagnetic nanograins embedded into GaMnSb matrix, InGaAs quantum wells doped with Mn delta-layer separated from the quantum well by the 3 nm thick spacer and CdGaAs2 bulk single crystal with 6 at % Mn are discussed. |