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Material covered in
lectures |
Reading material in the text (not covered or partially covered in the
class) |
HW/Project assignments |
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Chapter 8 Sections 8.2 |
Chapter 8 Sections 8.3, 8.4 (Tables
8.1 and 8.2; Examples 8.1 and 8.2), 8.8, 8.9 |
Project 2 MOSFETs (due Tue, Nov 24, in class) Exam II: Thursday, Nov
19 |
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Chapter 7 Sections 7.2-7.3, |
Chapter 7 Sections 7.1, 7.6 |
HW5 (Due Tuesday, Nov 17 in class) 7.2, 7.6
(understand the nMOS problem in 7.1 before working on this problem), 7.8, 7.17 For Exercises
only: 7.1, 7.10, 7.11,
7.19, 7.20, 7.21 |
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Chapter 5 Sections 5.4.1 & 5.4.3 |
Chapter 5 Sections 5.1-5.3 Sections 5.4.2, 5.4.3 Sections 5.5 & 5.7 Graduate
Students: Please read other diode structures/applications in Section 5.6 |
Project 1: (in class, Thursday, Nov 5) HW4: (in class, Tuesday, Nov 3) 5.5, 5.7, 5.12 (some answers are included in
Chap_5-Exercise.pdf. However, you
still need to turn in these) Exercise Problems for Project 1 (don’t turn these
in; however you need to go through these before working on Project 1): Chap 5-Exercise.pdf |
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Chapter 4 Sections 4.1-4.5 Section 4.6 Sections 4.7.1-4.7.6 |
Chapter 4 Sections 4.7.7-4.7.9 &
4.8 |
HW3 (Due Tuesday, October 27 in class) 4.20, 4.21,
4.22, 4.25, 4.32, 4.36, 4.38 Exercise problems (don’t turn these in): 4.19, 4.26, 4.27, 4.33 Exercise
problems for the first exam: |
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Chapter 3 Sections 3.2.1-3.2.3, 3.3,
3.4, 3.5.2, 3.6, 3.7 |
Chapter 3 Sections 3.2.1, 3.5.3, 3.8,
3.9 |
HW2 (Due in class, Thursday, October 1) 2.30, 2.35, 2.36, 2.44 3.1, 3.4, 3.12, 3.15 (use the charge neutrality concept), 3.20 (assume excess electron & hole
concentrations are equal to each other), 3.22, 3,27,
3.40, 3.41 (use Fig. 3.3
for mobility), 3.45 For Exercises only (don’t need to turn these in): 2.31, 2.40(a)
& (b) [Use Table 2.3,
Eqs. (2.72) and (2.91), to include T dependence of effective
mass and Eg], 3.6, 3.8,
3.10, 3.16, 3.23, 3.30, 3.36, 3.44 3.49 [Please read Sec.3.7.4 for surface
recombination. The surface recombination rate, S, just provides the
first derivative boundary condition, such as dp/dx, at the surface as given
in Eq. (3.92). Take S as a given condition. Graduate
students should try to derive Eq. (3.94)] Additional Exercise: In a p-type Si sample with a length of
L. If np(x=0)= 10npo,
np(x=L)= np(L). Assume L
<< Ln (diffusion length) and electric field is
negligible. (a) Determine
expressions for np(x) and diffusion current for
electrons JnDiff(x) for 0<x<L in terms of npo,
np(L), Dn, tn (life time) and L. (b) Explain why JnDiff(x)
is actually independent of x. (c) Find the drift
electron current JnDrif(x). (d) Find the drift
hole current JpDrif(x). (e) Find the
diffusion hole current JpDiff(x). Explain how you obtain
the solution in (c), (d), and (e). |
|
Chapter 2 Sections 2.3, 2.6 –
2.8 |
Chapter 2 Sections 2.1 – 2.3,
2.4.1 – 2.4.2, 2.8.2, 2.9 For graduate
students, please also read Section A.1 on Pages 66 & 67 |
HW1:
Due Tuesday, Sept 15 in class Chapter 2: 2.3, 2.4,
2.6, 2.7, 2.15, 2.14, 2.16, 2.24, 2.25, 2.26 Extra
problem: Briefly explain the reasons for the 3 different
ranges in the n-T
curve for an extrinsic semiconductor; i.e., intrinsic, saturation and
freeze-out ranges (also called intrinsic, extrinsic and freeze-out
regions in some books) For graduate students: 2.17 (Nv, Nc and Eg are all T-dependent
but assume that effective mass is T-independent) |
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Chapter 1, Sections 1.1 - 1.3 |
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