Department of Electrical & Computer Engineering
			Ming-Cheng Cheng Associate Professor Dept. of Electrical & Computer Engineering Department of Physics Center for Quantum Device Technology Clarkson University Potsdam, NY 13699-5720 Phone: 315-268-7735 Fax: 315-268-7600 Email: mcheng@clarkson.edu	· Ph.D., Electrical Engineering, 1990, Polytechnic University, NY, USA · M.S., System Engineering, 1986, Polytechnic University, NY, USA · B.S., Electrophysics, 1980, National Chiao-Tung University, Hsin-Chu, Taiwan
Vita		Research Group
Teaching	ES250 Electrical Science
	EE311 EE Junior Lab
	EE341 Microelectronics
	EE381 Electromagnetic Fields & Waves
	EE441/541 Semiconductor Devices for IC Simulation
	EE442/542 CMOS IC Design
	EE448/548 Solar Cells
	EE641 Charge Carrier Transport in Semiconductors
Research Interests
My research is in general concerned with device physics, modeling & simulation of nano-scale devices and quantum-dot and quantum-well photovoltaic structures, electro-thermal simulation of semiconductor devices, integrated circuits and systems, and electromagnetics simulation. Recent research focuses on development of thermal models based on reduced order modeling techniques, electro-thermal simulation of IC’s, FinFETs and photovoltaic cells/modules/arrays, simulation of quantum devices including QD and QW photovoltaics.
Research Experience
· Thermal and electrothermal modeling of semiconductor devices, integrated circuits and systems · Electrothermal modeling of photovoltaic cells, modules and arrays · Reduced order modeling for thermal simulation of semiconductor chips · Modeling of Nanostructure devices · Simulation of spin transistors · Monte Carlo simulation and hydrodynamic modeling of semiconductor devices · Effects of DX centers on 2DE in AlGaAs/GaAs heterojunctions · Single-event upset/burnout in Silicon Carbide devices due to high energy ionizing particle radiation · Eddy current and hysteresis losses in magnetic materials
Selected Publications · Yu Zhang, Ming-C Cheng, Pragasen Pillay, “A Novel Hysteresis Core Loss Model,for Magnetic Laminations”, IEEE Tran Energy Conversion, Vol. 26, No. 4, pp. 993-999, Dec 2011. · Eric Forman, Peter Habitz, Ming-C. Cheng, Christino Tamon, “Inclusion of Chemical-Mechanical Polishing Variation in Statistical Static Timing Analysis,” IEEE Trans. Comput.-Aided Des. Integr. Circuits and Syst., Vol. 30, pp. 1758 – 1762, Nov. 2011. · Y.X. Liang, Q. Dong, M.C. Cheng, U. Gennser, A. Cavanna, Y. Jin, “Insight into low frequency noise induced by gate leakage current in AlGaAs/GaAs high electron mobility transistors at 4.2K,” Applied Phys. Lett., Vol. 99, 113505 (2011). · Ming-C. Cheng, Kun Zhang, “An Effective Thermal Circuit Model for Electro-thermal Simulation of SOI Analog Circuits,” Solid-State Electronics, 48–61, vol. 62, 2011. ( doi: 10.1016/j.sse.2011.03.013). · Kun Zhang, Ming-C. Cheng, “Thermal Circuit for SOI Structure Accounting for Non-Isothermal effect,” IEEE Trans. Electron Devices, Vol 57, pp. 2838-2847, November 2010. · Yu Zhang, MingC. Cheng, Pragasen Pillay, Brian Helenbrook , “High Order Finite Element Model for Core Loss Assessment in a Hysteresis Magnetic Lamination,” J. Appl. Physics, Vol. 106, 043911 (2009). · E. Gremion, A. Cavanna, Y-X. Liang, U. Gennser, M.-C. Cheng, etc., “Development of Ultra-Low Noise HEMTs for Cryoelectronics at ≤ 4.2 K,” J. Low Temperature Physics, Vol. 151, pp. 971-978, May, 2008 · Feixia Yu, Ming-C. Cheng, “Electrothermal Simulation of SOI CMOS Analog Integrated Circuits,” Solid-State Electronics, vol. 51, pp. 691-702, May 2007. · S. Saikin, M. Shen, Ming-C. Cheng, “Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier,“ J. Phys.: Condens. Matter, vol. 18, pp. 1535–1544, January 2006. · Min Shen, Semion Saikin, Ming-C. Cheng, “Spin injection in spin FETs using a step-doping profile,” IEEE Trans. Nanotechnol., vol. 4, pp. 40-44, Jan. 2005. · Feixia Yu, Ming-C. Cheng, "Application of heat flow models to SOI current mirrors," Solid-State Electronics Vol. 48, pp. 1733-1739, Oct 2004. · Jun Lin, Min Shen, Ming-C. Cheng, M.L. Glasser, "Efficient thermal modeling of SOI MOSFETs for fast dynamic operation," IEEE Trans. Electron Devices, Vol. 51, pp. 1659-1666, Oct. 2004. · Ming Shen, Semion Saikin, Ming-C. Cheng, "Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well," J. Appl. Phys., Vol. 96, pp. 4319-4325, 2004. · Semion Saikin, Min Shen and Ming-C. Cheng, "Study of Spin-Polarized Transport Properties for Spin-FET Design Optimization," IEEE Trans. Nanotechnology, Vol. 3, pp. 173-179, March 2004. · Ming-C. Cheng, Feixia Yu, Peter Habitz, Goodarz Ahmadi, "Analytical heat flow modeling of silicon-on-insulator devices," Solid-State Electronics, Vol. 48, pp. 415-426, March 2004. · Min Shen, S. Saikin, M.C. Cheng, Vladimir Privman, "Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction," Mathematics and Computers in Simulation, 65, pp. 351-363, March 2004. · Ming-C. Cheng, Feixia Yu, Jun Lin, Min Shen, Goodarz Ahmadi, "Steady-State and Dynamic Heat Flow Modeling of SOI MOSFET’s," Microelectronics Reliability, vol. 44, pp. 381-396, March 2004. (Invited paper) · Feixia Yu, Ming-C. Cheng, Peter Habitz and Goodarz Ahmadi, "Modeling of Thermal Behavior in SOI Structures," IEEE Trans. Electron Devices, Vol. 51, pp. 83-91, January 2004. · Ming-C. Cheng, R. Wettimuny, P. Habitz and G. Ahmadi, "Thermal simulation for SOI devices using thermal circuit models and device simulation," Solid St. Electronics, Vol. 47, pp. 345-351, Feb 2003. · Semion Saikin, Min Shen, Ming-C. Cheng, Vladimir Privman, "Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures," J. Appl. Phys., pp. 1769-1775, August 2003.