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Department of

Electrical & Computer Engineering

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Ming-Cheng Cheng

Associate Professor

Dept. of Electrical & Computer Engineering

Department of Physics

Center for Quantum Device Technology

Clarkson University

Potsdam, NY 13699-5720

 

Phone: 315-268-7735

Fax: 315-268-7600

Email: mcheng@clarkson.edu

·     Ph.D., Electrical Engineering, 1990, Polytechnic University, NY, USA

·     M.S., System Engineering, 1986, Polytechnic University, NY, USA

·     B.S., Electrophysics, 1980, National Chiao-Tung University, Hsin-Chu, Taiwan

 

Vita

 

Research Overview

 

 

 

 

Teaching

ES250 Electrical Science

 

 

 

 

 

EE311  EE Junior Lab

 

 

 

 

 

EE341  Microelectronics

 

 

 

 

 

EE381  Electromagnetic Fields & Waves

 

 

 

 

 

EE441/541  Semiconductor Devices for IC Simulation

 

 

 

 

 

EE442/542  CMOS IC Design  

 

 

 

 

 

EE448/548 Solar Cells

 

 

 

 

 

EE641  Charge Carrier Transport in Semiconductors

 

 

 

 

Research Interests

 

·         Reduced-order modeling of thermal simulation for 3D  stacked integrated chips

·         Application of reduced-order models to compact thermal modeling of semiconductor devices

·         Electro-thermal simulation of nano-scale devices, integrated circuits and systems including photovoltaics

·         Electro-thermal simulation of FinFETs, IC’s and photovoltaic cells/modules/arrays

·         Modeling & simulation of nano-scale devices and quantum-dot and quantum-well photovoltaic structures

·         Electromagnetics simulation

 

Research Experience

 

·         Thermal and electrothermal modeling of semiconductor devices, integrated circuits and systems

·         Electrothermal modeling of photovoltaic cells, modules and arrays

·         Reduced order modeling for thermal simulation of semiconductor chips

·         Effects of DX centers on 2DE in AlGaAs/GaAs heterojunctions

·         Eddy current and hysteresis  losses in in hysteresis magnetic laminations

·         Single-event upset/burnout in SiC devices due to high energy ionizing particle radiation

·         Monte Carlo simulation and hydrodynamic modeling of semiconductor devices

 

 

Recent Publications

·          

K. Zhang, W. Jia, J. Koplowitz, Piergiovanni Marzocca, Ming-C. Cheng, “Modeling of Photovoltaic Cells and Arrays Based on Singular Value Decomposition”, Semiconductor Science & Technology, in press, 2013.

·          

R. Venters, Bian T. Helenbrook, Kun Zhang, Ming-C. Cheng, “Proper Orthogonal Decomposition Based Thermal Modeling of Semiconductor Structures”, IEEE Trans Electron Devices, vol.59, No. 11, pp. 2924-2931, Nov. 2012.

·          

Eric Foreman, Peter Habitz, Ming-C. Cheng, Chandu Visweswariah, “A Novel Method for Reducing Metal Variation with Statistical Static Timing Analysis,” IEEE Trans. Comput.-Aided Des. Integr. Circuits and Syst., vol. 31, pp. 1293-1297, August 2012.

·          

Yu Zhang, Pragasen Pillay, Maged Ibrahim, Ming-C Cheng, “Magnetic Characteristics and Excess Eddy Current Losses”, IEEE Tran Energy Conversion, vol. 48, no. 2, pp. 623 - 629, March-April, 2012

·          

Yu Zhang, Ming-C Cheng, Pragasen Pillay, “A Novel Hysteresis Core Loss Model,for Magnetic Laminations”, IEEE Tran Energy Conversion, Vol. 26, No. 4, pp. 993-999, Dec 2011.

·          

Eric Foreman, Peter Habitz, Ming-C. Cheng, Christino Tamon, “Inclusion of Chemical-Mechanical Polishing Variation in Statistical Static Timing Analysis,” IEEE Trans. Comput.-Aided Des. Integr. Circuits and Syst., Vol. 30, pp. 1758 – 1762, Nov. 2011.

·          

Y.X. Liang, Q. Dong, M.C. Cheng, U. Gennser, A. Cavanna, Y. Jin, “Insight into low frequency noise induced by gate leakage current in AlGaAs/GaAs high electron mobility transistors at 4.2K,” Applied Phys. Lett., Vol. 99, 113505 (2011).

·          

Ming-C. Cheng, Kun Zhang, “An Effective Thermal Circuit Model for Electro-thermal Simulation of SOI Analog Circuits,” Solid-State Electronics, 48–61, vol. 62, 2011. ( doi: 10.1016/j.sse.2011.03.013).

·          

Kun Zhang, Ming-C. Cheng, “Thermal Circuit for SOI Structure Accounting for Non-Isothermal effect,” IEEE Trans. Electron Devices, Vol 57, pp. 2838-2847, November 2010.

·          

Yu Zhang, MingC. Cheng, Pragasen Pillay, Brian Helenbrook ,High Order Finite Element Model for Core Loss Assessment in a Hysteresis Magnetic Lamination,” J. Appl. Physics, Vol. 106, 043911 (2009).

·          

E. Gremion, A. Cavanna, Y-X. Liang, U. Gennser, M.-C. Cheng, etc., “Development of Ultra-Low Noise HEMTs for Cryoelectronics at  ≤ 4.2 K,”  J. Low Temperature Physics, Vol. 151, pp. 971-978, May, 2008

·          

Feixia Yu, Ming-C. Cheng, “Electrothermal Simulation of SOI CMOS Analog Integrated Circuits,” Solid-State Electronics, vol. 51, pp. 691-702, May 2007.

·          

S. Saikin, M. Shen, Ming-C. Cheng, “Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier, J. Phys.: Condens. Matter, vol. 18, pp. 1535–1544, January 2006.

·          

Min Shen, Semion Saikin, Ming-C. Cheng, “Spin injection in spin FETs using a step-doping profile,” IEEE Trans. Nanotechnol., vol. 4, pp. 40-44, Jan. 2005.

·          

Feixia Yu, Ming-C. Cheng, "Application of heat flow models to SOI current mirrors," Solid-State Electronics Vol. 48, pp. 1733-1739, Oct 2004.

·          

Jun Lin, Min Shen, Ming-C. Cheng, M.L. Glasser, "Efficient thermal modeling of SOI MOSFETs for fast dynamic operation," IEEE Trans. Electron Devices, Vol. 51, pp. 1659-1666, Oct. 2004.

·          

Ming Shen, Semion Saikin, Ming-C. Cheng, "Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well," J. Appl. Phys., Vol. 96, pp. 4319-4325, 2004.

·          

Semion Saikin, Min Shen and Ming-C. Cheng, "Study of Spin-Polarized Transport Properties for Spin-FET Design Optimization," IEEE Trans. Nanotechnology, Vol. 3, pp. 173-179, March 2004.

·          

Ming-C. Cheng, Feixia Yu, Peter Habitz, Goodarz Ahmadi, "Analytical heat flow modeling of silicon-on-insulator devices," Solid-State Electronics, Vol. 48, pp. 415-426, March 2004.

·          

Min Shen, S. Saikin, M.C. Cheng, Vladimir Privman, "Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction," Mathematics and Computers in Simulation, 65, pp. 351-363, March 2004.

·          

Ming-C. Cheng, Feixia Yu, Jun Lin, Min Shen, Goodarz Ahmadi, "Steady-State and Dynamic Heat Flow Modeling of SOI MOSFET’s," Microelectronics Reliability, vol. 44, pp. 381-396, March 2004. (Invited paper)

·          

Feixia Yu, Ming-C. Cheng, Peter Habitz and Goodarz Ahmadi, "Modeling of Thermal Behavior in SOI Structures," IEEE Trans. Electron Devices, Vol. 51, pp. 83-91, January 2004.

·          

Ming-C. Cheng, R. Wettimuny, P. Habitz and G. Ahmadi, "Thermal simulation for SOI devices using thermal circuit models and device simulation," Solid St. Electronics, Vol. 47, pp. 345-351, Feb 2003.

·          

Semion Saikin, Min Shen, Ming-C. Cheng, Vladimir Privman, "Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures," J. Appl. Phys., pp. 1769-1775, August 2003.