Department of

Electrical & Computer Engineering

 

Ming-Cheng Cheng

Associate Professor

Dept. of Electrical & Computer Engineering

Department of Physics

Center for Quantum Device Technology

Clarkson University

Potsdam, NY 13699-5720

 

Phone: 315-268-7735

Fax: 315-268-7600

Email: mcheng@clarkson.edu

·     Ph.D., Electrical Engineering, 1990, Polytechnic University, NY, USA

·     M.S., System Engineering, 1986, Polytechnic University, NY, USA

·     B.S., Electrophysics, 1980, National Chiao-Tung University, Hsin-Chu, Taiwan

 

Vita

 

Research Group

 

 

 

 

Teaching

ES250 Electrical Science

 

 

 

 

 

EE311  EE Junior Lab

 

 

 

 

 

EE341  Microelectronics

 

 

 

 

 

EE381  Electromagnetic Fields & Waves

 

 

 

 

 

EE441/541  Semiconductor Devices for IC Simulation

 

 

 

 

 

EE442/542  CMOS IC Design  

 

 

 

 

 

EE641  Charge Carrier Transport in Semiconductors

 

 

 

 

Research Interests

 

My research is in general concerned with device physics and modeling & simulation of electronic & thermal characteristics for advanced solid-state devices and materials including nanostructure devices/materials. Recent research focuses on modeling of thermal effects on SOI devices and HBTs, simulation/modeling of quantum spin-polarized transistors, DX center effects on 2DEG in heterojunction devices and eddy current & hysteresis losses in magnetic materials.

 

Research Experience

 

o      Thermal modeling in SOI devices, interconnects, integrated circuits

o      Electrothermal simulation of SOI circuits

o      Modeling of Nanostructure devices

o      Simulation of spin transistors

o      Monte Carlo simulation and hydrodynamic modeling of semiconductor devices

o      Effects of DX centers on 2DE in AlGaAs/GaAs heterojunctions

o      Optimization of solid-state devices, such as MOSFETs. SOIs, Si/Ge HBTs

o      Single-event upset/burnout in Silicon Carbide devices due to high energy ionizing particle radiation

o      Eddy current and hysteresis  losses in magnetic materials

 

 

 

Selected Publications

Feixia Yu, Ming-C. Cheng, “Electrothermal Simulation of SOI CMOS Analog Integrated Circuits,” Solid-State Electronics, vol. 51, pp. 691-702, May 2007.

S. Saikin, M. Shen, Ming-C. Cheng, “Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier,“ J. Phys.: Condens. Matter, vol. 18, pp. 1535–1544, January 2006.

Min Shen, Semion Saikin, Ming-C. Cheng, “Spin injection in spin FETs using a step-doping profile,” IEEE Trans. Nanotechnol., vol. 4, pp. 40-44, Jan. 2005.

Feixia Yu, Ming-C. Cheng, "Application of heat flow models to SOI current mirrors," Solid-State Electronics Vol. 48, pp. 1733-1739, Oct 2004.

Jun Lin, Min Shen, Ming-C. Cheng, M.L. Glasser, "Efficient thermal modeling of SOI MOSFETs for fast dynamic operation," IEEE Trans. Electron Devices, Vol. 51, pp. 1659-1666, Oct. 2004.

Ming Shen, Semion Saikin, Ming-C. Cheng, "Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well," J. Appl. Phys., Vol. 96, pp. 4319-4325, Oct 2004.

Semion Saikin, Min Shen and Ming-C. Cheng, "Study of Spin-Polarized Transport Properties for Spin-FET Design Optimization," IEEE Trans. Nanotechnology, Vol. 3, pp. 173-179, March 2004.

Ming-C. Cheng, Feixia Yu, Peter Habitz, Goodarz Ahmadi, "Analytical heat flow modeling of silicon-on-insulator devices," Solid-State Electronics, Vol. 48, pp. 415-426, March 2004.

Min Shen, Semion Saikin, Ming-C. Cheng, Vladimir Privman, "Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction," Mathematics and Computers in Simulation, 65, pp. 351-363, March 2004.

Ming-C. Cheng, Feixia Yu, Jun Lin, Min Shen, Goodarz Ahmadi, "Steady-State and Dynamic Heat Flow Modeling of SOI MOSFET’s," Microelectronics Reliability, vol. 44, pp. 381-396, March 2004. (Invited paper)

Feixia Yu, Ming-C. Cheng, Peter Habitz and Goodarz Ahmadi, "Modeling of Thermal Behavior in SOI Structures," IEEE Trans. Electron Devices, Vol. 51, pp. 83-91, January 2004.

Ming-C. Cheng, R. Wettimuny, P. Habitz and G. Ahmadi, "Thermal simulation for SOI devices using thermal circuit models and device simulation," Solid St. Electronics, Vol. 47, pp. 345-351, Feb 2003.

Semion Saikin, Min Shen, Ming-C. Cheng, Vladimir Privman, "Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures," J. Appl. Phys., pp. 1769-1775, August 2003.