Department of Electrical & Computer Engineering
			Ming-Cheng Cheng Associate Professor Dept. of Electrical & Computer Engineering Department of Physics Center for Quantum Device Technology Clarkson University Potsdam, NY 13699-5720 Phone: 315-268-7735 Fax: 315-268-7600 Email: mcheng@clarkson.edu	· Ph.D., Electrical Engineering, 1990, Polytechnic University, NY, USA · M.S., System Engineering, 1986, Polytechnic University, NY, USA · B.S., Electrophysics, 1980, National Chiao-Tung University, Hsin-Chu, Taiwan
Vita		Research Group
Teaching	ES250 Electrical Science
	EE311 EE Junior Lab
	EE341 Microelectronics
	EE381 Electromagnetic Fields & Waves
	EE441/541 Semiconductor Devices for IC Simulation
	EE442/542 CMOS IC Design
	EE641 Charge Carrier Transport in Semiconductors
Research Interests
My research is in general concerned with device physics and modeling & simulation of electronic & thermal characteristics for advanced solid-state devices and materials including nanostructure devices/materials. Recent research focuses on modeling of thermal effects on SOI devices and HBTs, simulation/modeling of quantum spin-polarized transistors, DX center effects on 2DEG in heterojunction devices and eddy current & hysteresis losses in magnetic materials.
Research Experience
o Thermal modeling in SOI devices, interconnects, integrated circuits o Electrothermal simulation of SOI circuits o Modeling of Nanostructure devices o Simulation of spin transistors o Monte Carlo simulation and hydrodynamic modeling of semiconductor devices o Effects of DX centers on 2DE in AlGaAs/GaAs heterojunctions o Optimization of solid-state devices, such as MOSFETs. SOIs, Si/Ge HBTs o Single-event upset/burnout in Silicon Carbide devices due to high energy ionizing particle radiation o Eddy current and hysteresis losses in magnetic materials
Selected Publications Feixia Yu, Ming-C. Cheng, “Electrothermal Simulation of SOI CMOS Analog Integrated Circuits,” Solid-State Electronics, vol. 51, pp. 691-702, May 2007. S. Saikin, M. Shen, Ming-C. Cheng, “Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier,“ J. Phys.: Condens. Matter, vol. 18, pp. 1535–1544, January 2006. Min Shen, Semion Saikin, Ming-C. Cheng, “Spin injection in spin FETs using a step-doping profile,” IEEE Trans. Nanotechnol., vol. 4, pp. 40-44, Jan. 2005. Feixia Yu, Ming-C. Cheng, "Application of heat flow models to SOI current mirrors," Solid-State Electronics Vol. 48, pp. 1733-1739, Oct 2004. Jun Lin, Min Shen, Ming-C. Cheng, M.L. Glasser, "Efficient thermal modeling of SOI MOSFETs for fast dynamic operation," IEEE Trans. Electron Devices, Vol. 51, pp. 1659-1666, Oct. 2004. Ming Shen, Semion Saikin, Ming-C. Cheng, "Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well," J. Appl. Phys., Vol. 96, pp. 4319-4325, Oct 2004. Semion Saikin, Min Shen and Ming-C. Cheng, "Study of Spin-Polarized Transport Properties for Spin-FET Design Optimization," IEEE Trans. Nanotechnology, Vol. 3, pp. 173-179, March 2004. Ming-C. Cheng, Feixia Yu, Peter Habitz, Goodarz Ahmadi, "Analytical heat flow modeling of silicon-on-insulator devices," Solid-State Electronics, Vol. 48, pp. 415-426, March 2004. Min Shen, Semion Saikin, Ming-C. Cheng, Vladimir Privman, "Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction," Mathematics and Computers in Simulation, 65, pp. 351-363, March 2004. Ming-C. Cheng, Feixia Yu, Jun Lin, Min Shen, Goodarz Ahmadi, "Steady-State and Dynamic Heat Flow Modeling of SOI MOSFET’s," Microelectronics Reliability, vol. 44, pp. 381-396, March 2004. (Invited paper) Feixia Yu, Ming-C. Cheng, Peter Habitz and Goodarz Ahmadi, "Modeling of Thermal Behavior in SOI Structures," IEEE Trans. Electron Devices, Vol. 51, pp. 83-91, January 2004. Ming-C. Cheng, R. Wettimuny, P. Habitz and G. Ahmadi, "Thermal simulation for SOI devices using thermal circuit models and device simulation," Solid St. Electronics, Vol. 47, pp. 345-351, Feb 2003. Semion Saikin, Min Shen, Ming-C. Cheng, Vladimir Privman, "Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures," J. Appl. Phys., pp. 1769-1775, August 2003.