ES
260: Materials Science and Engineering
I: Fall
2009
Catalog
Info: The effects of bonding (ionic, covalent, metallic),
microstructure (crystalline or amorphous), and defects (vacancies,
dislocations, precipitates or voids) on the engineering properties of solids.
Course coverage includes crystal structure, solid-state diffusion, phase
equilibrium, phase transformation in crystalline solids, mechanical, and electrical
properties of crystalline solids are emphasized.
Prerequisites: PH 131, CM 103 or 131, MA132 or consent
of the instructor.
Textbook: Fundamentals of Materials Science and Engineering/An Integrated Approach; William D. Callister,
Jr. and David G. Rethwisch; 3rd Ed.; John Wiley
&Sons, ISBN 978-0-470-12537-3.
Instructor: Ian
I. Suni, Professor of Chemical and Biomolecular
Engineering
Office: 236
CAMP Tel: 268-4471
Email: isuni@clarkson.edu Office Hrs: TTh 10:40-12:00, W
1:00-2:20
Class: Section 03 Tues. & Thurs. 1:00 AM – 2:15 PM CAMP 177
Topical
Outline: Introduction:
Chapter 1. (Read for yourself).
Atomic Structure and Interatomic
Bonding: Chapter 2.
Structures
of Metals and Ceramics:
Chapter 3.
Polymer
Structures:
Chapter 4.
Imperfections
in Solids:
Chapter 5.
Diffusion:
Chapter 6.
Mechanical
Properties:
Chapter 7.
Deformation
and Strengthening Mechanisms:
Chapter 8 (8.1-8.11).
Failure:
Chapter 9 (9.1-9.11, 9.15-9.17).
Phase
Diagrams:
Chapter 10.
Electrical
Properties:
Chapter 12 (12.1-12.13, 12.15, 12.18).
Grading:
Home Work (must be
handed in during class on due date) 10%
EXAM I : Chapters 2-5 September 24th 21%
EXAM II
: Chapters 6-8 October 27th 21%
EXAM III: Chapters 9, 10, 12 November 24th 21%
FINAL: Cumulative 27%
Note: Students are required to
attend class. All exams are closed book
& notes and are given in class at the usual time and place. Course participants are allowed to bring one
hand written sheet (8.5”x11”) of information (both sides). All
three of these written sheets can be saved and brought to the final exam. The first three in class exams will have
both problem solving and multiple-choice questions; the final exam will have
only multiple-choice questions.
Missing an exam will result in ZERO for that exam
unless there is a valid excuse with documentation. In that case, the scores on subsequent exams will
be more heavily weighted. No make-up exams will be given for any
reason whatsoever. No exams will be given
in advance, for any reason whatsoever.
Please do not ask take an exam in advance, or to take a make-up
exam.
Homework Assignments will be collected and partially
graded. No late assignments will be accepted. Not all problems will be
graded. Solutions will be posted after
due date.
Sept. 3 2.6 2.13 2.15 3.2 3.6 3.8 3.15 3.17 3.19 3.20
Sept. 10 3.28 3.34 3.36
3.39 3.43 3.44 3.49 3.51
Sept. 17 4.2 4.3 4.6 4.9 4.12 4.14 5.2 5.5 5.13 5.17
Oct. 6 6.4 6.5 6.7 6.8 6.11 6.15 6.16
Oct. 13 7.3 7.9 7.12 7.15 7.21 7.24 7.26 7.28 7.35 7.36
Oct. 20 8.1 8.3 8.4 8.7 8.9 8.12 8.14
Nov. 3 9.2 9.4 9.6 9.12 9.14 9.18 9.21
Nov. 12 10.1 10.5 10.7 10.13 10.18 10.20 10.26 10.29 10.31 10.35
Nov. 19 12.1 12.6 12.7 12.10 12.14 12.16 12.17 12.20 12.23
Course
Objectives:
1. Apply the concepts of crystal structure,
including defect structures, to solving materials problems.
2. Apply knowledge of solid-state diffusion
to solve materials processing problems.
3. Explain the mechanical properties of
materials under one-time, constant, and cyclical stresses.
4. Relate a material’s thermal properties to
its atomic bonding and three-dimensional structure.
5. Relate failure of a
material to the type of stress and to the mechanical properties and/or crystal
structure of the material.
6. Explain the meaning of equilibrium phase
diagrams of metals and ceramics.
7. Explain the relationship
between a material’s atomic bonding and three-dimensional crystal structure and
its electrical properties.
8. Be
able to determine the electrical properties of a semiconductor as a function of
dopant concentration, dopant
type, bandgap, and temperature.
Course
Outcomes (Primarily ABET outcomes a and e. Others are
covered more informally and are difficult to quantify.)
1. Given the crystal structure and other
necessary information for a particular metal, semiconductor, or ceramic
material, students will be able to determine the density and x-ray diffraction
pattern, as well as the planar atomic densities and linear atomic densities
along particular planes and directions.
2. Students will be able to solve numerical
problems involving steady and unsteady state diffusion in crystalline solids.
3. Given the stress-strain curve for a
material, students will be able to determine the modulus of elasticity, yield
strength, tensile strength, and ductility
4. Students will be able to explain the
relationship between a material’s thermal properties and its atomic bonding and
three-dimensional structure.
5. Students will be able to explain the failure of materials by
fracture, fatigue, and creep.
6. For an equilibrium phase diagram, students
will be able to determine the composition and the mass fraction of each phase
and each microstructure present.
7. Given the
needed information, students will be able to calculate electrical properties,
such as conductivity and capacitance, of a given material.
8. Students will be able to determine the conductivity of an
intrinsic or extrinsic semiconductor for any doping level and temperature.