EE 341 – Microelectronic Circuits

Fall 2009

Electrical & Computer Engineering Department

www.clarkson.edu/~khondker

 

Catalog Data: Theory of semiconductor materials, p-n junctions, bipolar and field effect transistors. Analysis of device characteristics, device modeling and equivalent-circuits. PSpice simulation of electronic circuits. Applications including study of biasing, low frequency amplifiers, switching circuits and digital logic operations.  Prerequisites: ES250 (Electrical Science)

 

Instructor:      Abul Khondker

Office: 134 CAMP, Phone: 268-2127

 

Office Hours:  

Dr. Abul Khondker

CAMP 134, phone: x-2127

Office hours: MWF 2:30-3:30 pm, TTh 11-12 noon

khondker@clarkson.edu

           

Textbook:   Microelectronic Circuits, Sedra and Smith, 5th edition, Oxford University Press, 2004, ISBN 978-0-19-533883-6.

 

Learning Objectives:

 

·         Students will learn electronic characteristics and equivalent circuits for nonlinear semiconductor devices including diodes, bipolar junction transistors, and field effect transistors.

·         Students will learn how to analyze and design basic analog electronic circuits, such as rectifiers and amplifiers, etc.

·         Students will learn how to analyze fundamental switches and digital electronic circuits.

·         Students will gain experience in the use of SPICE for simulation of analog and digital electronics.

 

Relationship of course to ABET outcomes a ® k:

 

Engineering programs must demonstrate that their students attain the following outcomes:

 

(a) an ability to apply knowledge of mathematics, science, and engineering

(b) an ability to design and conduct experiments, as well as to analyze and interpret data

(c) an ability to design a system, component, or process to meet desired needs within realistic constraints such as economic, environmental, social, political, ethical, health and safety, manufacturability, and sustainability

(d) an ability to function on multidisciplinary teams

(e) an ability to identify, formulate, and solve engineering problems

(f) an understanding of professional and ethical responsibility

(g) an ability to communicate effectively

(h) the broad education necessary to understand the impact of engineering solutions in a global, economic, environmental, and societal context

(i) a recognition of the need for, and an ability to engage in life-long learning

(j) a knowledge of contemporary issues

(k) an ability to use the techniques, skills, and modern engineering tools necessary for engineering practice.

 

This course contributes to outcomes (a), (c), (e), (h), (i), (j) and (k).

 

Course Contents:

 

1.      Introduction to Electronics

2.      Diodes

Diode characteristics, circuit application, and basic diode SPICE model

3.      MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors)

Physical operation of depletion-model and enhancement of MOSFETs, DC biasing, small signal models, basic MOSFET and CMOS amplifiers, and basic MOSFET SPICE model

4.      BJTs (Bipolar Junction Transistors)

Operation modes of npn & pnp BJTs, DC biasing, small signal models, basic BJT amplifier configurations, and basic BJT SPICE model

5.      Basic BJT & MOSFET Digital Circuits

Basic switching circuits and Bipolar and CMOS logic circuits

 

Course Policies and Grading

 

            Problem sets will be given approximately every week.  Approximately 3-4 projects will be assigned during the course of the semester.

 

            HW Assignments:    20%

            Projects:                   20%

            2 Hour Exams:         35%

            Final Exam:              25%

                                          

Exam Policy and hour exam schedule: Closed book; one equation sheet may be allowed. 

 

        Oct 7, Wednesday, CB 176, 8:30-9:30 pm

        Nov 18, Wednesday, CB 176, 7:00-8:00 pm

 

 

 

Homework

Homework #1 (due September 7, 2009)

3.2 (c), (d), 3.3, 3.9 (a), (b), 3.13, 3.14, 3.23, 3.24, 3.25

 

Homework #2 (due September 16, 2009)

3.36, 3.40(a), 3.44, 3.45, 3.52, 3.54, 3.57(a), 3.59, 3.66, 3.67

 

Homework #3 (due September 23, 2009)

3.71, 3.72, 3.93, 3.95, 3.100

Bonus: 3.105(h)

 

Homework #4 (due October 5, 2009)

4.7, 4.12, 4.26, 4.35, 4.41, 4.42(a), (b), 4.43(a), (e), (h)

 

Homework #5 (due October 21, 2009)

4.47, 4.48, 4.49, 4.61, 4.69, 4.74

 

Homework #6 (due November 2, 2009)

4.79, 4.80, 4.81, 4.84, 4.85, 4.87, 4.88

Bonus: 4.86

 

Homework #7 (due November 11, 2009)

4.105, 4.106, 4.110, 4.112, 4.113

 

Homework #8 (due November 23, 2009)

5.8, 5.10, 5.12, 5.20, 5.24, 5.69, 5.78

 

 

 

 

 

Projects

 

Project #1 (due October 14, 2009)

 

            Design a full-wave rectifier circuit operating at 120 V (rms) and 60 Hz. The output DC voltage should be 12 V and the load resistance is 100 Ohms. It is required to have a ripple voltage of less than 0.4 V. The diodes are characterized by two parameters IS and n whose values are not specified. Characterize the required turns-ratio of the transformer, the capacitor and the diodes. For the diodes provide the peak inverse voltage and the peak-current ratings. Using PSpice, verify that your design. For this project you should work in a group of two and submit a single group report.

 

Project #2 (due October 26, 2009)

 

Solve Problem 4.77 by hand. Using PSpice verify that your hand calculations are correct. Submit a report.

 

Project #3 (due October 16, 2009)

 

Using PSpice verify the results for 4.105, 4.112, 113

 

·  Help on PSpice

pSpice Files:

Diodes
diode_ch.cir- diode characteristics
sm_sg_d1.cir- small-signal analysis in a diode circuit
3diode1.cir- 3 diode string - voltage regulator
zener1.cir- zener diode characteristics
zener2.cir- A circuit with 2 zener diodes
HW_rect.cir- Half-wave rectifier
FW_rect.cir- Full-Wave peak rectifier circuit

Bipolar Junction Transistors
NPN transistor output-characteristics
Example 4.9 of Sedra-Smith
Example 4.10 of Sedra-Smith 

Common_Emitter Example
Common-Emitter amplifier
Sensitivity analysis in Common-Emitter amplifier
Frequency response of the Common-Emitter amplifier
Common-Collector amplifier

Example 14.1

TTL voltage transfer characteristics

Field Effect Transistors
Id-Vds Characteristics of an NMOS transistor
Id-Vgs Characteristics of an NMOS transistor
NMOS inverter with a resistive load

Common_Source_Amplifier (Without subckt)

Common_Source Amplifier (with subckt)

CMOS inverter (DC Voltage characteristics)

CMOS inverter with a Capacitive load (Transient analysis)

 

 

limiter.cir- Limiter circuit